Micro light-emitting-diode display panel and manufacturing method thereof

ABSTRACT

The present invention provides a micro light emitting-diode display panel and a manufacturing method thereof. The first electrode contact and the second electrode contact are alternatively disposed on the base substrate of the micro light-emitting-diode display panel, and the first electrode contact and the second electrode contact are respectively connected with the bottom electrode and the connection electrode of the micro light-emitting-diode. The connection electrode is also connected the top electrode of the micro light-emitting-diode, and the micro light-emitting-diodes can be immediately inspected after the micro-light-emitting-diode is transferred, to reduce the difficulty of detection and product repair, and to improve the product yield.

BACKGROUND OF THE INVENTION

Field of Invention

The present invention relates to the field of liquid crystal display,and more particularly to a micro light-emitting-diode display panel anda manufacturing method thereof.

Description of Prior Art

Because of the advantages of high quality, power saving, thin body andwide applications, the flat panel display devices has become amainstream in the display devices and been widely used in variousconsumer electronic devices, such as mobile phones, personal digitalassistants, digital cameras, laptops, and desktop computers.

A micro LED display is a display that achieves image display by using ahigh density and small size LED arrays integrated on a substrate asdisplay pixels, the same as the large-size outdoor LED display, eachpixel can be addressed, be individually driven to light, can be seen asa shrink-down version of the outdoor LED display, to reduce the pixeldistance from millimeter to micron. The Micro LED display and theorganic light-emitting-diode (OLED) display are belong to self-luminousdisplays, however, with comparing with OLED display, the Micro LEDdisplay has better material stability, longer life, no image mark, etc.,which is considered the biggest competitor of the OLED display.

In the manufacturing process of the micro LED display panel, the microlight-emitting-diodes must grow on an original substrate (such assapphire-type substrate) by the molecular beam epitaxy method, formaking the display panel, the micro light-emitting-diode devices shouldbe transferred from the original substrate to a receiving substrate forforming the display panel in a display arrangement. Specifically, themicro light-emitting-diodes are firstly formed on the originalsubstrate, then, the micro light-emitting-diodes are lifted from theoriginal substrate by a laser lift-off (LLO) technology, the microlight-emitting-diodes are adhered from the original substrate to presetpositions of the receiving substrate, by using a transfer head which ismade of a material such as polydimethylsiloxane (PDMS).

Presently, after the micro light-emitting-diodes are transferred to thereceiving substrate, but also a top electrode needs to be formed todetermine whether the bonding between the micro light-emitting-diodesand receiving substrate is normal or not. However, because the processhas been basically completed at this moment, in this case even if thebonding between the micro light-emitting-diodes and the receivingsubstrate is poor, it is difficult to repair. Hence, it is needed toprovide a new micro LED display panel and a manufacturing methodthereof, which is capable of immediately performing the work-conditiontest of the micro light-emitting-diodes after transferring, to reducethe difficulty of product detection and product repair, and to improvethe product yield.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a microlight-emitting-diode display panel, which can reduce the difficulty ofproduct detection and product repair and improve product yield.

An object of the present invention is to further provide a manufacturingfor a micro light-emitting-diode display panel, which can reduce thedifficulty of product detection and product repair and improve productyield.

In order to achieve the objective, the present invention provides amicro light-emitting-diode display panel, which comprises: a basesubstrate, a plurality of sub-pixel regions disposing with an arrayarrangement on the base substrate, a first electrode contact and asecond electrode contact alternatively disposing within each of thesub-pixel regions, and a micro light-emitting-diode disposing on thefirst electrode contact and the second electrode contact within each ofthe sub-pixel regions.

The micro light-emitting-diode comprises: a bottom electrode contactingwith the first electrode contact, an LED semiconductor layer disposingabove the bottom electrode and contacting with the bottom electrode, atop electrode disposing on the LED semiconductor layer and contactingwith the LED semiconductor layer, an insulation-protective layersurrounding the LED semiconductor layer, and a connection electrodedisposing on the insulation-protective layer and connecting with the topelectrode and the second electrode contact.

The micro light-emitting-diode display panel further comprises: a TFTlayer is disposed between the base substrate, and the first electrodecontact and the second electrode contact.

The TFT layer comprises: an active layer disposed on the base substrate,a gate insulating layer covering the active layer and the basesubstrate, a gate electrode disposed on the gate insulating layer abovethe active layer, an intermediate insulating layer covering the gateelectrode and the gate insulating layer, a source electrode and a drainelectrode disposing on the intermediate insulating layer and contactingwith two ends of the active layer, and a passivation layer covering thesource electrode, the drain electrode and the intermediate insulatinglayer. The second electrode contact contacts with the source electrode.

The micro light-emitting-diode display panel further comprises: a pixeldefinition layer disposed on the passivation layer and located aroundthe micro light-emitting-diode, and a protective layer covering thepassivation layer, the first electrode contact, the second electrodecontact, the micro light-emitting-diode, and the pixel definition layer.

The present invention further provides a method for manufacturing amicro light-emitting-diode display panel, which comprises:

Step 1, an original substrate is provided. A plurality of microlight-emitting-diode semi-finished products disposed alternatively areformed on the original substrate.

Each of the plurality of micro light-emitting-diode semi-productscomprises: an LED semi-conductor layer disposed on the originalsubstrate, a first insulating layer covering the LED semi-conductorlayer and the original substrate, a bottom electrode disposed on thefirst insulating layer and contacted with the LED semi-conductor layer,and a connection electrode disposed on the first insulating layer andcontacted with the original substrate.

Step 2, a transporting substrate is provided. A surface of thetransporting substrate is bonded to the bottom electrode and theconnection electrode of each of the micro emitting diode semi-finishedproducts. The original substrate is peeled off, to transfer all of themicro emitting diode semi-finished products to the transportingsubstrate and to expose a side surface of the LED semi-conductor layercontacted with the original substrate.

Step 3, a second insulating layer and a top electrode disposed on thesecond insulating layer are orderly formed on the exposed LEDsemi-conductor layer and the first insulating layer, to obtain aplurality of micro light-emitting-diodes with an interval arrangement.The top electrode is contacted with the LED semi-conductor layer and theconnection electrode.

Step 4, a transfer head and a receiving substrate are provided. Thereceiving substrate comprises: a base substrate, a plurality ofsub-pixel regions disposing on the base substrate in an arrayarrangement, and a first electrode contact and a second electrodecontact alternatively disposing within each of the sub-pixel regions.

Step 5, the micro light-emitting-diodes on the transporting substrateare transferred onto the receiving substrate by the transfer head. Eachof the sub-pixel regions corresponds to the micro light-emitting-diodes.The bottom electrode and the connection electrode of the microlight-emitting-diodes of each of the sub-pixel regions are respectivelybonded to the first electrode contact and the second electrode contactwithin the sub-pixel region.

Step 6, a test voltage is provided to the first electrode contact andthe second electrode contact to test whether the respective microlight-emitting-diodes on the receiving substrate are normally lit ornot. If all of the micro light-emitting-diodes on the receivingsubstrate are normally lit, a protective layer is continuously formed onthe micro light-emitting-diodes, the first electrode contact, and thesecond electrode contact. If the micro light-emitting-diodes on thereceiving substrate are not normally lit, the microlight-emitting-diodes which are not normally lit are replaced with newmicro light-emitting-diodes. All of the micro light-emitting-diodes onthe receiving substrate are re-tested until they are normally lit.

The step S1 specifically comprises:

Step 11, an original substrate is provided. An LED semi-conductor thinfilm is formed on the original substrate. A patterned first photoresistlayer is formed on the LED semi-conductor thin film.

Step 12, the LED semi-conductor thin film is etched with the firstphotoresist layer as a shielding, to form a plurality of LEDsemi-conductor layers with an interval arrangement.

Step 13, a first insulating layer is covered on the LED semi-conductorlayers and the original substrate. A patterned second photoresist layeris formed on the first insulating layer.

Step 14, the first insulating layer is etched with the secondphotoresist layer as a shielding, to form a first via and a second via,penetrating through the first insulating layer. The first via and thesecond via respectively reveals a portion of the LED semiconductorlayers and a portion of the original substrate.

Step 15, a first metal thin film is formed on the first insulatinglayer, the LED semi-conductor layer, and the original substrate. Apatterned third photoresist layer is formed on the first metal thinfilm.

Step 16, the first metal thin film is etched with the third photoresistlayer as a shielding, to form a bottom electrode and a connectionelectrode. The bottom electrode contact with the LED semi-conductorlayer through the first via. The connection electrode contact with theoriginal substrate through the second via.

The transporting substrate in the step 2 is a hard substrate having anadhesive layer on its surface.

The step 3 specifically comprises:

Step 31, a second insulating layer is formed on the LED semi-conductorlayer and the first insulating layer. A patterned fourth photoresistlayer is formed on the second insulating layer.

Step 32, the second insulating layer is etched with the fourthphotoresist layer as a shielding, to form a third via and a fourth via,penetrating through the second insulating layer. The third via and thefourth via respectively reveals a portion of the LED semi-conductorlayer and a portion of the connection electrode.

Step 33, a conductive thin film is deposited and patterned on the secondinsulating layer, to form a top electrode. The top electrode contactwith the LED semi-conductor layer and the connection electrode throughthe third via and the fourth via, respectively.

The receiving substrate provided in the step S4 further comprises: a TFTlayer and a pixel definition layer.

The TFT layer is disposed between the base substrate, and the firstelectrode contact and the second electrode contact. The TFT layercomprises: an active layer disposed on the base substrate, a gateinsulating layer covering the active layer and the base substrate, agate electrode disposed on the gate insulating layer above the activelayer, an intermediate insulating layer covering the gate electrode andthe gate insulating layer, a source electrode and a drain electrodedisposing on the intermediate insulating layer and contacting with twoends of the active layer, and a passivation layer covering the sourceelectrode, the drain electrode and the intermediate insulating layer;the second electrode contact contacts with the source electrode. Thepixel definition layer is disposed on the passivation layer and locatedaround the micro light-emitting-diodes.

At least two bonding positions are preset on the first electrode contactand the second electrode contact. When the micro light-emitting-diodeswhich are not normally lit, are replaced with the new microlight-emitting-diodes in the step 6, the micro light-emitting-diodesafter a replacement and the micro light-emitting-diodes beforereplacement are in different bonding positions.

The original substrate is peeled off by a laser stripping process instep 2.

The present invention further provides a method for manufacturing amicro light-emitting-diode display panel, which comprises:

Step 1, an original substrate is provided. A plurality of microlight-emitting-diode semi-finished products disposed alternatively areformed on the original substrate.

Each of the plurality of micro light-emitting-diode semi-productscomprises: an LED semi-conductor layer disposed on the originalsubstrate, a first insulating layer covering the LED semi-conductorlayer and the original substrate, a bottom electrode disposed on thefirst insulating layer and contacted with the LED semi-conductor layer,and a connection electrode disposed on the first insulating layer andcontacted with the original substrate.

Step 2, a transporting substrate is provided. A surface of thetransporting substrate is bonded to the bottom electrode and theconnection electrode of each of the micro emitting diode semi-finishedproducts. The original substrate is peeled off, to transfer all of themicro emitting diode semi-finished products to the transportingsubstrate and to expose a side surface of the LED semi-conductor layercontacted with the original substrate.

Step 3, a second insulating layer and a top electrode disposed on thesecond insulating layer are orderly formed on the exposed LEDsemi-conductor layer and the first insulating layer, to obtain aplurality of micro light-emitting-diodes with an interval arrangement.The top electrode is contacted with the LED semi-conductor layer and theconnection electrode.

Step 4, a transfer head and a receiving substrate are provided. Thereceiving substrate comprises: a base substrate, a plurality ofsub-pixel regions disposing on the base substrate in an arrayarrangement, and a first electrode contact and a second electrodecontact alternatively disposing within each of the sub-pixel regions.

Step 5, the micro light-emitting-diodes on the transporting substrateare transferred onto the receiving substrate by the transfer head. Eachof the sub-pixel regions corresponds to the micro light-emitting-diodes.The bottom electrode and the connection electrode of the microlight-emitting-diodes of each of the sub-pixel regions are respectivelybonded to the first electrode contact and the second electrode contactwithin the sub-pixel region.

Step 6, a test voltage is provided to the first electrode contact andthe second electrode contact to test whether the respective microlight-emitting-diodes on the receiving substrate are normally lit ornot. If all of the micro light-emitting-diodes on the receivingsubstrate are normally lit, a protective layer is continuously formed onthe micro light-emitting-diodes, the first electrode contact, and thesecond electrode contact. If the micro light-emitting-diodes on thereceiving substrate are not normally lit, the microlight-emitting-diodes which are not normally lit are replaced with newmicro light-emitting-diodes. All of the micro light-emitting-diodes onthe receiving substrate are re-tested until they are normally lit.

Wherein the step S1 specifically comprises:

Step 11, an original substrate is provided. An LED semi-conductor thinfilm is formed on the original substrate. A patterned first photoresistlayer is formed on the LED semi-conductor thin film.

Step 12, the LED semi-conductor thin film is etched with the firstphotoresist layer as a shielding, to form a plurality of LEDsemi-conductor layers with an interval arrangement.

Step 13, a first insulating layer is covered on the LED semi-conductorlayers and the original substrate. A patterned second photoresist layeris formed on the first insulating layer.

Step 14, the first insulating layer is etched with the secondphotoresist layer as a shielding, to form a first via and a second via,penetrating through the first insulating layer. The first via and thesecond via respectively reveals a portion of the LED semiconductorlayers and a portion of the original substrate.

Step 15, a first metal thin film is formed on the first insulatinglayer, the LED semi-conductor layer, and the original substrate. Apatterned third photoresist layer is formed on the first metal thinfilm.

Step 16, the first metal thin film is etched with the third photoresistlayer as a shielding, to form a bottom electrode and a connectionelectrode. The bottom electrode contact with the LED semi-conductorlayer through the first via. The connection electrode contact with theoriginal substrate through the second via.

Wherein the transporting substrate in the step 2 is a hard substratehaving an adhesive layer on its surface.

The beneficial effects of the present invention is: the presentinvention provides a micro light-emitting-diode display panel. A firstelectrode contact and a second electrode contact are disposedalternatively on a base substrate of the micro light-emitting-diodesdisplay panel. The first electrode contact and the second electrodecontact are respectively in contact with the bottom electrode and theconnection electrode of the micro light-emitting-diodes. The connectionelectrode is also in contact with the top electrode of the microlight-emitting-diodes, and the micro light-emitting-diodes can beimmediately detected after the micro light-emitting-diodes aretransferred, to reduce the difficulty of product detection and productrepair, and to improve the product yield. The invention also provides amethod for manufacturing a micro light-emitting-diode display panel,which is capable of immediately detecting the microlight-emitting-diodes after the micro light-emitting-diodes aretransferred, to reduce the difficulty of product detection and productrepair, and to improve the product yield.

BRIEF DESCRIPTION OF THE DRAWINGS

For better understanding the technical proposals and other beneficialeffects of the present invention, please refer the following detaileddescription of the present invention with the accompanying drawings.

In drawings:

FIGS. 1-8 are illustrative diagrams of the step S1 of a method formanufacturing a micro light-emitting-diode display panel according tothe present invention.

FIG. 9 is illustrative diagram of the step S2 of a method formanufacturing a micro light-emitting-diode display panel according tothe present invention.

FIGS. 10-12 are illustrative diagrams of the step S3 of a method formanufacturing a micro light-emitting-diode display panel according tothe present invention.

FIGS. 13 and 14 are illustrative diagrams of the step S4 and the step S5of a method for manufacturing a micro light-emitting-diode display panelaccording to the present invention.

FIGS. 15 is illustrative diagram of the step S6 of a method formanufacturing a micro light-emitting-diode display panel according tothe present invention and also a structural illustrative diagram of themicro light-emitting-diode display panel according to the presentinvention.

FIG. 16 is top-view illustration of the step S6 of a method formanufacturing a micro light-emitting-diode display panel according tothe present invention.

FIG. 17 is a flow diagram of a method for manufacturing a microlight-emitting-diode display panel according to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The technical proposals and the effects of the present invention will bedescribed in further detail with reference to the below preferredembodiments of the present invention and their accompanying drawings.

Please refer to FIG. 15, the present invention provides a microlight-emitting-diode display panel, which comprises: a base substrate41, a plurality of sub-pixel regions 15 disposing with an arrayarrangement on the base substrate 41, a first electrode contact 43 and asecond electrode contact 44 alternatively disposing within each of thesub-pixel regions 15, and a micro light-emitting-diode 200 disposing onthe first electrode contact 43 and the second electrode contact 44within each of the sub-pixel regions 15.

The micro light-emitting-diode 200 comprises: a bottom electrode 6contacting with the first electrode contact 43, an LED semiconductorlayer 2 disposing above the bottom electrode 6 and contacting with thebottom electrode 6, a top electrode 13 disposing on the LEDsemiconductor layer 2 and contacting with the LED semiconductor layer 2,an insulation-protective layer 14 surrounding the LED semiconductorlayer 2, and a connection electrode 7 disposing on theinsulation-protective layer 14 and connecting with the top electrode 13and the second electrode contact 44.

Specifically, the micro light-emitting-diode display panel furthercomprises: a TFT layer 42 is disposed between the base substrate 41, andthe first electrode contact 43 and the second electrode contact 44. TheTFT layer 42 comprises: an active layer 421 disposed on the basesubstrate 41, a gate insulating layer 422 covering the active layer 421and the base substrate 41, a gate electrode 423 disposed on the gateinsulating layer 422 above the active layer 421, an intermediateinsulating layer 424 covering the gate electrode 423 and the gateinsulating layer 422, a source electrode 425 and a drain electrode 426disposing on the intermediate insulating layer 424 and contacting withtwo ends of the active layer 421, and a passivation layer 427 coveringthe source electrode 425, the drain electrode 426 and the intermediateinsulating layer 424. The second electrode contact 44 contact with thesource electrode 425.

Specifically, the micro light-emitting-diode display panel furthercomprises: a pixel definition layer 45 disposed on the passivation layer427 and located around the micro light-emitting-diode 200, and aprotective layer 16 covering the passivation layer 427, the firstelectrode contact 43, the second electrode contact 44, the microlight-emitting-diode 200, and the pixel definition layer 45.

Specifically, the protective layer 16 has a function of enhancing thelight extraction of the micro light-emitting-diode 200, and theprotective layer 16 has a good heat transfer capability.

Specifically, the LED semiconductor layer 2 comprises an N+ layer, a P+layer, and a multi-quantum well layer in contact with the N+layer andthe P+layer. The material of the bottom electrode 6 and the connectionelectrode 7 may be selected from at least one of nickel (Ni), molybdenum(Mo), aluminum (Al), gold (Au), platinum (Pt), and titanium (Ti). Thetop electrode 13 is a transparent electrode, which is made from indiumtin oxide (ITO), indium zinc oxide (IZO), or a mixture of polyethylenedioxythiophene and polystyrene sulfonic acid (PEDOT: PSS). Theinsulation-protective layer 14 is made from silicon oxide (SiOx),silicon nitride (SiNx), or alumina (Al₂O₃).

It is to be noted that, with that the top electrode 13 and the secondelectrode contact 44 are connected by the connection electrode 7 in themicro light-emitting-diode display panel of the present invention, thetop electrode 13 can be immediately formed before the microlight-emitting-diodes are transferred, the micro light-emitting-diodes200 can directly perform the lighting test of the microlight-emitting-diodes 200 after the micro light-emitting-diodes 200 istransferred, and when the micro light-emitting-diodes 200 are determinedas being normal lit, and then continues to manufacture other structuressuch as the protective layer 16, which is capable of reducing thedifficulty of product detection and product repair, and improving theproduct yield.

Please refer to FIG. 17, the present invention further provides a flowdiagram of a method for manufacturing a micro light-emitting-diodedisplay panel, which comprises:

Step 1, an original substrate 1 is provided. A plurality of microlight-emitting-diode semi-finished products 100 disposed alternativelyare formed on the original substrate 1.

Each of the plurality of micro light-emitting-diode semi-productscomprises 100: an LED semi-conductor layer 2 disposed on the originalsubstrate 1, a first insulating layer 3 covering the LED semi-conductorlayer 2 and the original substrate 1, a bottom electrode 6 disposed onthe first insulating layer 3 and contacted with the LED semi-conductorlayer 2, and a connection electrode 7 disposed on the first insulatinglayer 3 and contacted with the original substrate 1.

Specifically, the step S1 specifically comprises:

Step 11, please refer to FIG. 1, an original substrate 1 is provided. AnLED semi-conductor thin film 2′ is formed on the original substrate 1. Apatterned first photoresist layer 10 is formed on the LED semi-conductorthin film 2′.

Step 12, please refer to FIG. 2, the LED semi-conductor thin film 2′ isetched with the first photoresist layer 10 as a shielding, to form aplurality of LED semi-conductor layers 2 with an interval arrangement.

Step 13, please refer to FIGS. 3 and 4, a first insulating layer 3 iscovered on the LED semi-conductor layers 2 and the original substrate. Apatterned second photoresist layer 20 is formed on the first insulatinglayer 3.

Step 14, please refer to FIG. 5, the first insulating layer 3 is etchedwith the second photoresist layer 20 as a shielding, to form a first via4 and a second via 5, penetrating through the first insulating layer 3.The first via 4 and the second via 5 respectively reveals a portion ofthe LED semiconductor layers 2 and a portion of the original substrate1.

Step 15, please refer to FIGS. 6 and 7, a first metal thin film 6′ isformed on the first insulating layer 3, the LED semi-conductor layer 2,and the original substrate 1. A patterned third photoresist layer 30 isformed on the first metal thin film 6′.

Step 16, please refer to FIG. 8, the first metal thin film 6′ is etchedwith the third photoresist layer 30 as a shielding, to form a bottomelectrode 6 and a connection electrode 7. The bottom electrode 6 contactwith the LED semi-conductor layer 2 through the first via 4. Theconnection electrode 8 contact with the original substrate 1 through thesecond via 5.

Specifically, the original substrate 1 is a sapphire substrate (Al₂O₃),a silicon substrate (Si), a silicon carbide substrate (SiC), or agallium nitride substrate (GaN), and the like. The LED semiconductorlayer 2 includes an N+ layer, a P+ layer and a multi-quantum well layerin contact with the N+ and P+ layers. The material of the bottomelectrode 6 and the connection electrode 7 may be a combination of oneor more of metals such as nickel, molybdenum, aluminum, gold, platinum,and titanium. The material of the first insulating layer 3 is siliconoxide, silicon nitride, or alumina and the like.

Step 2, a transporting substrate 8 is provided. A surface of thetransporting substrate 8 is bonded to the bottom electrode 6 and theconnection electrode 7 of each of the micro emitting diode semi-finishedproducts 100. The original substrate 1 is peeled off, to transfer all ofthe micro emitting diode semi-finished products 100 to the transportingsubstrate 8 and to expose a side surface of the LED semi-conductor layer2 contacted with the original substrate 1.

Specifically, the transporting substrate 8 in the step 2 is a hardsubstrate having an adhesive layer on its surface. With the adhesivelayer on the surface of the hard substrate to adhere the bottomelectrode 6 and the connection electrode 7, the micro emitting diodesemi-finished products 100 and the transporting substrate 8 areadhered,. The original substrate 1 is peeled off with a Laser lift-off(LLO) technology, to transfer the micro emitting diode semi-finishedproducts 100 to the transporting substrate 8 and to expose the sidesurface of the LED semi-conductor layer 2 contacted with the originalsubstrate 1.

Specifically, the step 2 further comprises: the transporting substrate 8and the semi-finished product 100 of the micro-emitter diode on thetransporting substrate 8 are reversed, so that the exposed side of theLED semiconductor layer 2 faces upwards, facilitating the subsequentprocess.

Step 3, a second insulating layer 9 and a top electrode 13 disposed onthe second insulating layer 9 are orderly formed on the exposed LEDsemi-conductor layer 2 and the first insulating layer 3, to obtain aplurality of micro light-emitting-diodes 200 with an intervalarrangement. The top electrode 13 is contacted with the LEDsemi-conductor layer 2 and the connection electrode 7.

Specifically, the first insulating layer 3 and the second insulatinglayer 9 together constitute an insulation-protective layer 14surrounding the LED semiconductor layer 2.

Specifically, the step S3 specifically comprises: step 31, please referto FIG. 10, a second insulating layer 9 is formed on the LEDsemi-conductor layer 2 and the first insulating layer 3. A patternedfourth photoresist layer 40 is formed on the second insulating layer 9.

Step 32, please refer to FIG. 11, the second insulating layer 9 isetched with the fourth photoresist layer 40 as a shielding, to form athird via 11 and a fourth via 12, penetrating through the secondinsulating layer 9. The third via 11 and the fourth via 12 respectivelyreveals a portion of the LED semi-conductor layer 2 and a portion of theconnection electrode 7.

Step 33, please refer to FIG. 12, a conductive thin film is depositedand patterned on the second insulating layer 9, to form a top electrode13. The top electrode 13 contacts with the LED semi-conductor layer 2and the connection electrode 7 through the third via 11 and the fourthvia 12, respectively.

Step 4, please refer to FIGS. 13 and 14, a transfer head 300 and areceiving substrate 400 are provided. The receiving substrate 400comprises: a base substrate 41, a plurality of sub-pixel regions 15disposing on the base substrate 41 in an array arrangement, and firstelectrode contact 43 and second electrode contact 44 alternativelydisposing within each of the sub-pixel regions 15.

Specifically, the receiving substrate 400 provided in the step S4further comprises: a TFT layer 42 and a pixel definition layer 45. TheTFT layer 42 is disposed between the base substrate 41, and the firstelectrode contact 43 and the second electrode contact 44. the TFT layer42 comprises: an active layer 421 disposed on the base substrate 41, agate insulating layer 422 covering the active layer 421 and the basesubstrate 41, a gate electrode 423 disposed on the gate insulating layer422 above the active layer 421, an intermediate insulating layer 424covering the gate electrode 423 and the gate insulating layer 422, asource electrode 425 and a drain electrode 426 disposing on theintermediate insulating layer 424 and contacting with two ends of theactive layer 421, and a passivation layer 427 covering the sourceelectrode 425, the drain electrode 426 and the intermediate insulatinglayer 424. The second electrode contact 44 contact with the sourceelectrode 425. The pixel definition layer 45 is disposed on thepassivation layer 427 and located around the micro light-emitting-diodes200.

Step 5, please refer to FIG. 14, the micro light-emitting-diodes 200 onthe transporting substrate 8 are transferred onto the receivingsubstrate 400 by the transfer head 300. Each of the sub-pixel regions 15corresponds to the micro light-emitting-diodes 200. The bottom electrode6 and the connection electrode 7 of the micro light-emitting-diodes 200of each of the sub-pixel regions 15 are respectively bonded to the firstelectrode contact 43 and the second electrode contact 44 within thesub-pixel region 15.

Step 6, please refer to FIGS. 15 and 16, a test voltage is provided tothe first electrode contact 43 and the second electrode contact 44 totest whether the respective micro light-emitting-diodes 200 on thereceiving substrate 400 are normally lit or not. If all of the microlight-emitting-diodes 200 on the receiving substrate 400 are normallylit, a protective layer 16 is continuously formed on the microlight-emitting-diodes 200, the passivation layer 427, the pixeldefinition layer 45, the first electrode contact 43, and the secondelectrode contact 44. If the micro light-emitting-diodes 200 on thereceiving substrate 400 are not normally lit, the microlight-emitting-diodes 200 which are not normally lit are replaced withnew micro light-emitting-diodes 200. All of the microlight-emitting-diodes 200 on the receiving substrate 400 are re-testeduntil they are normally lit.

Specifically, the protective layer 16 has a function of enhancing thelight extraction of the micro light-emitting-diodes 200, and theprotective layer 16 has a good heat transfer capability.

It is to be noted that the micro-light emitting diode display panel ofthe present invention firstly manufactures a semi-finished product 100including a bottom electrode 6, an LED semiconductor layer 2, and amicro-light-emitting-diode connecting the electrode 7 on the originalsubstrate 1, then, the semi-finished product 100 is transferred onto thetransport substrate 8 and is inverted upside down, and then the topelectrode 13 connected to both the LED semiconductor layer 2 and theconnection electrode 7 is formed to obtain the microlight-emitting-diodes 200, and finally the micro light-emitting-diodes200 is transferred onto the receiving substrate 400 so that the bottomelectrode 6 and the connection electrode 7 are in contact with the firstelectrode contact 43 and the second electrode contact 44, respectively,so that after the micro light-emitting-diodes 200 are transferred,without any process, the lighting test of the light-emitting-diodes 200can immediately be performed, and other structures such as theprotective layer 16 can be continuously manufactured after the microlight-emitting-diodes 200 are determined as normally lit, therebyreducing the difficulty of detection and product repair, and improvingthe product yield.

As mentioned above, the present invention provides a microlight-emitting-diode display panel. A first electrode contact and asecond electrode contact are disposed alternatively on a base substrateof the micro light-emitting-diodes display panel. The first electrodecontact and the second electrode contact are respectively in contactwith the bottom electrode and the connection electrode of the microlight-emitting-diodes. The connection electrode is also in contact withthe top electrode of the micro light-emitting-diodes, and the microlight-emitting-diodes can be immediately detected after the microlight-emitting-diodes are transferred, to reduce the difficulty ofproduct detection and product repair, and to improve the product yield.

As mentioned above, those of ordinary skill in the art, withoutdeparting from the spirit and scope of the present invention, can makevarious kinds of modifications and variations to the present invention.Therefore, all such modifications and variations are intended to beincluded in the protection scope of the appended claims of the presentinvention.

1. A micro light-emitting-diode display panel, comprising a basesubstrate, a plurality of sub-pixel regions disposing with an arrayarrangement on the base substrate, a first electrode contact and asecond electrode contact alternatively disposing within each of thesub-pixel regions, and a micro light-emitting-diode disposing on thefirst electrode contact and the second electrode contact within each ofthe sub-pixel regions; the micro light-emitting-diode comprising: abottom electrode contacting with the first electrode contact, an LEDsemiconductor layer disposing above the bottom electrode and contactingwith the bottom electrode, a top electrode disposing on the LEDsemiconductor layer and contacting with the LED semiconductor layer, aninsulation-protective layer surrounding the LED semiconductor layer, anda connection electrode disposing on the insulation-protective layer andconnecting with the top electrode and the second electrode contact. 2.The micro light-emitting-diode display panel according to claim 1,further comprising: a TFT layer is disposed between the base substrate,and the first electrode contact and the second electrode contact; theTFT layer comprises: an active layer disposed on the base substrate, agate insulating layer covering the active layer and the base substrate,a gate electrode disposed on the gate insulating layer above the activelayer, an intermediate insulating layer covering the gate electrode andthe gate insulating layer, a source electrode and a drain electrodedisposing on the intermediate insulating layer and contacting with twoends of the active layer, and a passivation layer covering the sourceelectrode, the drain electrode and the intermediate insulating layer;the second electrode contact contacts with the source electrode.
 3. Themicro light-emitting-diode display panel according to claim 2, furthercomprising: a pixel definition layer disposed on the passivation layerand located around the micro light-emitting-diode, and a protectivelayer covering the passivation layer, the first electrode contact, thesecond electrode contact, the micro light-emitting-diode, and the pixeldefinition layer.
 4. A method for manufacturing a microlight-emitting-diode display panel, comprising: step 1, providing anoriginal substrate, forming a plurality of micro light-emitting-diodesemi-finished products disposed alternatively on the original substrate;each of the plurality of micro light-emitting-diode semi-productscomprising: an LED semi-conductor layer disposed on the originalsubstrate, a first insulating layer covering the LED semi-conductorlayer and the original substrate, a bottom electrode disposed on thefirst insulating layer and contacted with the LED semi-conductor layer,and a connection electrode disposed on the first insulating layer andcontacted with the original substrate; step 2, providing a transportingsubstrate, bonding a surface of the transporting substrate to the bottomelectrode and the connection electrode of each of the micro emittingdiode semi-finished products, peeling off the original substrate, totransfer all of the micro emitting diode semi-finished products to thetransporting substrate and to expose a side surface of the LEDsemi-conductor layer contacted with the original substrate; step 3,orderly forming a second insulating layer and a top electrode disposedon the second insulating layer on the exposed LED semi-conductor layerand the first insulating layer, to obtain a plurality of microlight-emitting-diodes with an interval arrangement; the top electrodebeing contacted with the LED semi-conductor layer and the connectionelectrode; step 4, providing a transfer head and a receiving substrate,the receiving substrate comprising: a base substrate, a plurality ofsub-pixel regions disposing on the base substrate in an arrayarrangement, and a first electrode contact and a second electrodecontact alternatively disposing within each of the sub-pixel regions;step 5, transferring the micro light-emitting-diodes on the transportingsubstrate onto the receiving substrate by the transfer head, each of thesub-pixel regions corresponding to the micro light-emitting-diodes,respectively bonding the bottom electrode and the connection electrodeof the micro light-emitting-diodes of each of the sub-pixel regions tothe first electrode contact and the second electrode contact within thesub-pixel region; step 6, providing a test voltage to the firstelectrode contact and the second electrode contact to test whether therespective micro light-emitting-diodes on the receiving substrate arenormally lit or not, if all of the micro light-emitting-diodes on thereceiving substrate are normally lit, continuously forming a protectivelayer on the micro light-emitting-diodes, the first electrode contact,and the second electrode contact; if the micro light-emitting-diodes onthe receiving substrate are not normally lit, replacing the microlight-emitting-diodes which are not normally lit with new microlight-emitting-diodes, re-testing until all of the microlight-emitting-diodes on the receiving substrate are normally lit. 5.The method for manufacturing a micro light-emitting-diode display panelaccording to claim 4, wherein the step 1 specifically comprises: step11, providing an original substrate, forming an LED semi-conductor thinfilm on the original substrate, forming a patterned first photoresistlayer on the LED semi-conductor thin film; step 12, etching the LEDsemi-conductor thin film with the first photoresist layer as ashielding, to form a plurality of LED semi-conductor layers with aninterval arrangement; step 13, covering a first insulating layer on theLED semi-conductor layers and the original substrate, forming apatterned second photoresist layer on the first insulating layer; step14, etching the first insulating layer with the second photoresist layeras a shielding, to form a first via and a second via, penetratingthrough the first insulating layer, the first via and the second viarespectively reveals a portion of the LED semiconductor layers and aportion of the original substrate; step 15, forming a first metal thinfilm on the first insulating layer, the LED semi-conductor layer, andthe original substrate, forming a patterned third photoresist layer onthe first metal thin film; step 16, etching the first metal thin filmwith the third photoresist layer as a shielding, to form a bottomelectrode and a connection electrode, the bottom electrode contact withthe LED semi-conductor layer through the first via, and the connectionelectrode contact with the original substrate through the second via. 6.The method for manufacturing a micro light-emitting-diode display panelaccording to claim 4, wherein the transporting substrate in the step 2is a hard substrate having an adhesive layer on its surface.
 7. Themethod for manufacturing a micro light-emitting-diode display panelaccording to claim 4, wherein the step 3 specifically comprises: step31, forming a second insulating layer on the LED semi-conductor layerand the first insulating layer, forming a patterned fourth photoresistlayer on the second insulating layer; step 32, etching the secondinsulating layer with the fourth photoresist layer as a shielding, toform a third via and a fourth via, penetrating through the secondinsulating layer, the third via and the fourth via respectively revealsa portion of the LED semi-conductor layer and a portion of theconnection electrode; step 33, depositing and patterning a conductivethin film on the second insulating layer, to form a top electrode, thetop electrode contact with the LED semi-conductor layer and theconnection electrode through the third via and the fourth via,respectively.
 8. The method for manufacturing a microlight-emitting-diode display panel according to claim 4, wherein thereceiving substrate provided in the step 4 further comprises: a TFTlayer and a pixel definition layer; the TFT layer is disposed betweenthe base substrate, and the first electrode contact and the secondelectrode contact, the TFT layer comprises: an active layer disposed onthe base substrate, a gate insulating layer covering the active layerand the base substrate, a gate electrode disposed on the gate insulatinglayer above the active layer, an intermediate insulating layer coveringthe gate electrode and the gate insulating layer, a source electrode anda drain electrode disposing on the intermediate insulating layer andcontacting with two ends of the active layer, and a passivation layercovering the source electrode, the drain electrode and the intermediateinsulating layer; the second electrode contact contacts with the sourceelectrode; the pixel definition layer is disposed on the passivationlayer and located around the micro light-emitting-diodes.
 9. The methodfor manufacturing a micro light-emitting-diode display panel accordingto claim 4, wherein at least two bonding positions are preset on thefirst electrode contact and the second electrode contact, and when themicro light-emitting-diodes which are not be normally lit, are replacedwith the new micro light-emitting-diodes in the step 6, the microlight-emitting-diodes after a replacement and the microlight-emitting-diodes before replacement are in different bondingpositions.
 10. The method for manufacturing a micro light-emitting-diodedisplay panel according to claim 4, wherein the original substrate ispeeled off by a laser stripping process in step
 2. 11. A method formanufacturing a micro light-emitting-diode display panel, comprising:step 1, providing an original substrate, forming a plurality of microlight-emitting-diode semi-finished products disposed alternatively onthe original substrate; each of the plurality of microlight-emitting-diode semi-products comprising: an LED semi-conductorlayer disposed on the original substrate, a first insulating layercovering the LED semi-conductor layer and the original substrate, abottom electrode disposed on the first insulating layer and contactedwith the LED semi-conductor layer, and a connection electrode disposedon the first insulating layer and contacted with the original substrate;step 2, providing a transporting substrate, bonding a surface of thetransporting substrate to the bottom electrode and the connectionelectrode of each of the micro emitting diode semi-finished products,peeling off the original substrate, to transfer all of the microemitting diode semi-finished products to the transporting substrate andto expose a side surface of the LED semi-conductor layer contacted withthe original substrate; step 3, orderly forming a second insulatinglayer and a top electrode disposed on the second insulating layer on theexposed LED semi-conductor layer and the first insulating layer, toobtain a plurality of micro light-emitting-diodes with an intervalarrangement; the top electrode being contacted with the LEDsemi-conductor layer and the connection electrode; step 4, providing atransfer head and a receiving substrate, the receiving substratecomprising: a base substrate, a plurality of sub-pixel regions disposingon the base substrate in an array arrangement, and a first electrodecontact and a second electrode contact alternatively disposing withineach of the sub-pixel regions; step 5, transferring the microlight-emitting-diodes on the transporting substrate onto the receivingsubstrate by the transfer head, each of the sub-pixel regionscorresponding to the micro light-emitting-diodes, respectively bondingthe bottom electrode and the connection electrode of the microlight-emitting-diodes of each of the sub-pixel regions to the firstelectrode contact and the second electrode contact within the sub-pixelregion; step 6, providing a test voltage to the first electrode contactand the second electrode contact to test whether the respective microlight-emitting-diodes on the receiving substrate are normally lit ornot, if all of the micro light-emitting-diodes on the receivingsubstrate are normally lit, continuously forming a protective layer onthe micro light-emitting-diodes, the first electrode contact, and thesecond electrode contact; if the micro light-emitting-diodes on thereceiving substrate are not normally lit, replacing the microlight-emitting-diodes which are not normally lit with new microlight-emitting-diodes, re-testing until all of the microlight-emitting-diodes on the receiving substrate are normally lit;wherein the step 1 specifically comprises: step 11, providing anoriginal substrate, forming an LED semi-conductor thin film on theoriginal substrate, forming a patterned first photoresist layer on theLED semi-conductor thin film; step 12, etching the LED semi-conductorthin film with the first photoresist layer as a shielding, to form aplurality of LED semi-conductor layers with an interval arrangement;step 13, covering a first insulating layer on the LED semi-conductorlayers and the original substrate, forming a patterned secondphotoresist layer on the first insulating layer; step 14, etching thefirst insulating layer with the second photoresist layer as a shielding,to form a first via and a second via, penetrating through the firstinsulating layer, the first via and the second via respectively revealsa portion of the LED semiconductor layers and a portion of the originalsubstrate; step 15, forming a first metal thin film on the firstinsulating layer, the LED semi-conductor layer, and the originalsubstrate, forming a patterned third photoresist layer on the firstmetal thin film; step 16, etching the first metal thin film with thethird photoresist layer as a shielding, to form a bottom electrode and aconnection electrode, the bottom electrode contact with the LEDsemi-conductor layer through the first via, and the connection electrodecontact with the original substrate through the second via; wherein thetransporting substrate in the step 2 is a hard substrate having anadhesive layer on its surface.
 12. The method for manufacturing a microlight-emitting-diode display panel according to claim 11, wherein thestep 3 specifically comprises: step 31, forming a second insulatinglayer on the LED semi-conductor layer and the first insulating layer,forming a patterned fourth photoresist layer on the second insulatinglayer; step 32, etching the second insulating layer with the fourthphotoresist layer as a shielding, to form a third via and a fourth via,penetrating through the second insulating layer, the third via and thefourth via respectively reveals a portion of the LED semi-conductorlayer and a portion of the connection electrode; step 33, depositing andpatterning a conductive thin film on the second insulating layer, toform a top electrode, the top electrode contact with the LEDsemi-conductor layer and the connection electrode through the third viaand the fourth via, respectively.
 13. The method for manufacturing amicro light-emitting-diode display panel according to claim 11, whereinthe receiving substrate provided in the step 4 further comprises: a TFTlayer and a pixel definition layer; the TFT layer is disposed betweenthe base substrate, and the first electrode contact and the secondelectrode contact, the TFT layer comprises: an active layer disposed onthe base substrate, a gate insulating layer covering the active layerand the base substrate, a gate electrode disposed on the gate insulatinglayer above the active layer, an intermediate insulating layer coveringthe gate electrode and the gate insulating layer, a source electrode anda drain electrode disposing on the intermediate insulating layer andcontacting with two ends of the active layer, and a passivation layercovering the source electrode, the drain electrode and the intermediateinsulating layer; the second electrode contact contacts with the sourceelectrode; the pixel definition layer is disposed on the passivationlayer and located around the micro light-emitting-diodes.
 14. The methodfor manufacturing a micro light-emitting-diode display panel accordingto claim 11, wherein at least two bonding positions are preset on thefirst electrode contact and the second electrode contact, and when themicro light-emitting-diodes which are not be normally lit, are replacedwith the new micro light-emitting-diodes in the step 6, the microlight-emitting-diodes after a replacement and the microlight-emitting-diodes before replacement are in different bondingpositions.
 15. The method for manufacturing a micro light-emitting-diodedisplay panel according to claim 11, wherein the original substrate ispeeled off by a laser stripping process in step 2.